super fast recovery diode RFN10T2D ? applications ? dimensions (unit : mm) ? structure general rectification ? features 1)cathode common dual type. (to-220) 2)low v f 3)low switching loss ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ?c) symbol limits unit v rm 200 v v r 200 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit forward voltage v f 0.90 0.98 v i r 0.01 10 a trr 15 25 ns thermal resistance rth(j-c) 2.5 c/w * per diode reverse recovery time junction to case reverse current conditions i f =5a v r =200v i f =0.5a,i r =1a,irr=0.25i r parameter storage temperature conditions duty 0.5 direct voltage 60hz half sin wave, resistance load, 1/2io at per diode tc=122c 60hz half sin wave, non-repetitive one cycle peak value, tj=25c junction temperature 10 a 80 a forward current surge peak i fsm average rectified forward current io reverse voltage repetitive peak reverse voltage parameter rohm : to220fn dot (year week factory) 1.2 1.3 0.8 (1) (2) (3) 10.00.3 0.1 5.00.2 8.00.2 12.00.2 2.80.2 0.1 4.50.3 0.1 0.70.1 0.05 2.60.5 13.5min 8.0 15.00.4 0.2 rfn10 t2d 14.00.5 1/4 2011.12 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFN10T2D 0.001 0.01 0.1 1 10 100 0 500 1000 1500 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 0.1 1 10 100 1000 10000 0 50 100 150 200 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz tj=25 c 800 850 900 950 1000 v f dispersion map forward voltage:v f (mv) ave:887.5mv tj=25 c i f =5a n=20pcs 1 10 100 reverse current:i r (na) i r dispersion map tj=25 c v r =200v n=20pcs ave:14.3na 100 110 120 130 140 150 ave:133.2pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN10T2D 0 20 40 60 80 100 120 140 160 180 200 ave:167a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:14.1ns tj=25 c i f =0.5a i r =1.0a irr=0.25 i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1000 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 no break at 30kv c=100pf r=1.5k ave 24.75kv electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN10T2D 0 2 4 6 8 10 12 14 16 0 5 10 15 20 d.c. d=1/2 sin( 180) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 5 10 15 20 0 25 50 75 100 125 150 d.c. d=1/2 sin( 180) average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =100v 0a 0v 4/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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